| PART |
Description |
Maker |
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| PCH-27-103L PCH-27-104L PCH-27-105L PCH-27-106L PC |
Axial Lead Power Chokes
Power inductor, 10% tol, RoHS 1 ELEMENT, 1200 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 120 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 12000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 1500 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 8200 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 6.8 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 18000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 680 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 6800 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 2700 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 15000 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
Power inductor, 10% tol, RoHS 1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR
|
Coilcraft lnc.
Coilcraft, Inc.
COILCRAFT INC
|
| BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington
Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3
INDUCTOR PWR UNSHIELD 470UH SMT
Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| 2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
| STR-Y6753 STR-Y6763 STR-Y6754 STR-Y6735 STR-Y6700 |
Power IC for Quasi-Resonant Mode Switching Power Supplies with Low Standby Power
|
Sanken electric
|
| 2SC5993 |
Power Device - Power Transistors - Television/Display
For power amplification For TV VM circuit
|
PANASONIC[Panasonic Semiconductor]
|
| 2SA2067 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1272 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
|
