| PART |
Description |
Maker |
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| IS62WV5128ALL-70BI IS62WV5128BLL-55BI IS62WV5128BL |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
|
| EM641FT8V |
512K x8 bit Low Power Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512K X 8 STANDARD SRAM, 55 ns, PDSO32
512K X 8 STANDARD SRAM, 70 ns, PDSO32
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| K6F4008S2DFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F8016U6D-XF70 K6F8016U6D K6F8016U6D-FF55 K6F8016 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6T4008C K6T4008C1B K6T4008C1B-B K6T4008C1B-DB55 K |
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
RESISTOR 13K 1/16W 1
512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system
Asynchronous 4M(512Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
Brilliance Semiconducto...
|
