| PART |
Description |
Maker |
| MMG3007NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| MMG3011NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3002NT1 MMG3002NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3005NT1 MMG3005NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMA20312B |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
| MMG3015NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| HMC534LP5 HMC534LP5E |
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
MMIC VCO W/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.6 - 11.8 GHZ
|
Hittite Microwave Corporation
|
