| PART |
Description |
Maker |
| IXFR34N80 |
Single MOSFET Die Avalanche Rated
|
IXYS Corporation
|
| IXFN280N0708 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN280N07 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN34N100 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IXFN80N50 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| CP775 |
P-Channel MOSFET Die Enhancement-Mode
|
Central Semiconductor Corp
|
| S2206 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IRFC37N50A |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IRFC240 |
HEXFET Power MOSFET Die in Wafer Form
|
International Rectifier
|
