| PART |
Description |
Maker |
| MGA-22003-TR1 MGA-22003-BLK MGA-22003-TR2 |
2.3-2.7 GHz 3x3mm WiMAX and WiFi Power Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| HMC592 |
high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| MGA-43128-BLKG |
High Linearity (700-800) MHz Wireless Data Power Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| 2SC5347AF-TD-E 2SC5347AE-TD-E |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
|
Sanyo Semicon Device
|
| MMJT9410T1 MMJT9410-D |
NPN Bipolar Power Transistor
Bipolar Power Transistors NPN Silicon
|
ON Semiconductor
|
| MMJT9435T1 MMJT9435T1G MMJT9435T3 MMJT9435T3G MMJT |
PNP Bipolar Power Transistor
Bipolar Power Transistors PNP Silicon
|
ONSEMI[ON Semiconductor]
|
| BXL9812 |
Microwave Limiting Amplifi er
|
API Technologies Corp
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| NE532D LM158FE SA532D LM358A LM358 SE532 SE532FE S |
Low power dual operational amplifi
Dual Operational Amplifier
|
PHILIPS[Philips Semiconductors]
|
| HV25607 HV256FG-G |
32-Channel High Voltage Amplifi er Array
|
Supertex, Inc
|
