| PART |
Description |
Maker |
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| 1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| BB535 Q62702-B580 |
Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| BB134 |
UHF Variable Capacitance Diode
|
Leshan Radio Company
|
| BB215 |
UHF variable capacitance diode
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Philipss
|
| BB179BLX |
UHF variable capacitance diode
|
NXP Semiconductors
|
| BB134 |
UHF variable capacitance diode
|
Philips Semiconductors
|
| BB179 |
UHF VARIABLE CAPACITANCE DIODE
|
Unisonic Technologies
|
| BB184 |
UHF low voltage variable capacitance diode
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
