| PART |
Description |
Maker |
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM
10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
| M29KW064E90ZA1T M29KDCL3-32T M29KW064E M29KW064E11 |
From old datasheet system
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory
64MBIT (4MBX16, UNIFORM BLOCK) 3V SUPPLY LIGHTFLASHMEMORY
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| RMLV0408E RMLV0408EGSA-5S2 RMLV0414EGSB-5S2 RMLV04 |
4Mb Advanced LPSRAM
|
Renesas Electronics Corporation
|
| M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| GS74108ATJ |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74116ATJ |
256K x 16 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74117AX-8I GS74117AX GS74117AX-10 GS74117AX-10I |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| IBM0418A41BLAB |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM
|
IBM Corporation
|
| GS842Z18AB-180I GS842Z18AB-100 GS842Z18AB-100I GS8 |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 12 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 128K X 36 ZBT SRAM, 8 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 10 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
