| PART |
Description |
Maker |
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| M5M5V4R01J-15 M5M5V4R01J-12 |
PTSE 5C 5#16 PIN RECP 4194304位(41943041位)的CMOS静态RAM 4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
| MH4M36CJD-6 MH4M36CJD-7 MH4M36CJD-5 MH4M36CJD |
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模式(4194304 - Word6位)动态随机存储器 From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write CONNECTOR ACCESSORY 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
| TC528267 |
262144 Words x 8 Bits Multiport DRAM
|
Toshiba
|
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| GM71C4400DT-80 GM71C4400D GM71C4400D-60 GM71C4400D |
x4 Fast Page Mode DRAM 1,048,576 Words x Bit Organization
|
LG[LG Semicon Co.,Ltd.]
|
| MH4V724AWXJ-6 MH4V724AWXJ-5 MH4V724AWXJ |
FAST PAGE MODE 301989888 - BIT ( 4194304 - WORD BY 72 - BIT ) DYNAMIC RAM 快速页面模01989888 -位(4194304 - Word2 -位)动态随机存储器 From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write 1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
| LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write 1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
| MSC23408C MSC23408CL-XXDS8 |
4194304-Word x 8-Bit DRAM MODULE : FAST PAGE MODE TYPE 4PDT 5A MINI 115VAC 4,194,304-Word x 8-Bit DRAM MODULE : FAST PAGE MODE TYPE 4194304字8位DRAM模块:快速页面模式型
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY 65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC List of Unclassifed Manufacturers
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