| PART |
Description |
Maker |
| BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
| BLL1214-35 |
L-band radar LDMOS driver transistor
|
NXP Semiconductors
|
| BLL6H1214-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLS6G3135S-120 BLS6G3135-120 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier
|
Philips Semiconductors
|
| BLA6H0912-500 |
LDMOS avionics radar power transistor
|
NXP Semiconductors
|
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| AM82731-003 2769 |
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲驱动的RF和微波晶体管)
From old datasheet system
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AM82731-012 2767 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM82731-006 2884 |
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
