| PART |
Description |
Maker |
| TC55V1403J-20 TC55V1403FT-15 TC55V1403FT-20 TC55V1 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC5517CFL-20 TC5517CP-15 TC5517CF-15 TC5517CF-20 T |
2.048 WORD X 8 BIT CMOS STATIC RAM
|
Toshiba Corporation
Toshiba Semiconductor
|
| TC55VEM416BXGN55 TC55YEM416BXGN70 TC55YCM416BSGN T |
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
|
Toshiba Semiconductor
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| TC55V16100FT-10 TC55V16100FT-12 TC55V16100FT-15 |
1,048,576-WORD BY 16-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| MSM524204 |
1,048,576-Word x 4-Bit CMOS STATIC RAM
From old datasheet system
|
OKI
|
| TC55VD1618FF-133 TC55VD1618FF-150 TC55VD1618FF-167 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| AK5322048BW |
1,048,576 Word by 36 Bit CMOS Dynamic Random Access Memory 1,048,576 Word6位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
