| PART |
Description |
Maker |
| SB20W05V |
Schottky Barrier Diode (Twin Type Cathode Common) 50V, 2A Rectifier
50V 2A Rectifier
50V/ 2A Rectifier
|
SANYO[Sanyo Semicon Device]
|
| SB100-05H |
50V/ 10A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 50V,10A Rectifier
50V, 10A Rectifier(用于高频整流应用的重复反向电50V，平均整流电0A 的整流器) 50V0A条整流器（用于高频整流应用的重复反向电压- 50V的平均整流电0A条的整流器）
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| SB200-09R |
90V/ 20A Rectifier
90V, 20A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| SB200-09 |
90V/ 20A Rectifier
90V, 20A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| SB300-05R |
50V/ 30A Rectifier
50V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SB20-05P |
Schottky Barrier Diode 50V, 2A Rectifier
50V/ 2A Rectifier
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| SBR20A40CT08 SBR20A40CT SBR20A40CTFP |
20A SBR? SUPER BARRIER RECTIFIER
20A SBR㈢ SUPER BARRIER RECTIFIER
|
Diodes Incorporated
|
| SDR625G |
20A 35nsec 300-600 V Hyper Fast Rectifier 20 A, 500 V, SILICON, RECTIFIER DIODE
|
Solid State Devices, Inc.
|
| HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1 |
CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 20 A, 400 V, N-CHANNEL IGBT, TO-218AC
20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SB005W03 |
Schottky Barrier Diode
Shottky Barrier Diode
50V/ 6A Rectifier
50V, 6A Rectifier
|
Sanyo Semiconductor
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
|
