| PART |
Description |
Maker |
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRF614B IRF614BFP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR224B IRFU224B IRFR224BTMFP001 IRFR224BTMNL |
250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A
250V N-Channel MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.075ohm，身份证\u003d 38A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI634G ORFO634G |
POWER MOSFET 功率MOSFET
Power MOSFET(Vdss=250V / Rds(on)=0.45ohm / Id=5.6A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRC644 |
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
| IRFM214B IRFM214BTFFP001 |
250V N-Channel B-FET / Substitute of IRFM214A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI624G |
Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.4A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| FQB9P25 FQI9P25 FQB9P25TM |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI16N25 FQB16N25 FQB16N25TM |
250V N-Channel MOSFET
250V N-Channel QFET
|
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FAIRCHILD[Fairchild Semiconductor]
|
