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GT60M322 - TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT60M322_482139.PDF Datasheet

 
Part No. GT60M322
Description TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

File Size 186.89K  /  6 Page  

Maker


Toshiba Semiconductor



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(CHINA HK & SZ)
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Part: GT60M323
Maker: TOSHIBA
Pack: TO-3PL
Stock: Reserved
Unit price for :
    50: $2.35
  100: $2.24
1000: $2.12

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