Part Number Hot Search : 
20TTS 58V257 L603G FCT37CT P4KE160 AS70SL MAX5151 M62440FP
Product Description
Full Text Search

2SK3653B - N-CHANNEL SILICON J-FET

2SK3653B_481031.PDF Datasheet


 Full text search : N-CHANNEL SILICON J-FET
 Product Description search : N-CHANNEL SILICON J-FET


 Related Part Number
PART Description Maker
2SJ486 RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
2SJ518 Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
HITACHI[Hitachi Semiconductor]
2SJ541 Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
HITACHI[Hitachi Semiconductor]
2SJ548 Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
HITACHI[Hitachi Semiconductor]
D2219UK D2219 METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
2SK823 FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
NEC, Corp.
NEC[NEC]
MMFT2N25E-D TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MTB10N40E MTB10N40E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTP10N40 MTP10N40E ON2540 MTP10N40E-D TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
2SK3653B motor 2SK3653B planar 2SK3653B Bandwidth 2SK3653B Semiconductor 2SK3653B Mosfet
2SK3653B Hex 2SK3653B MARKING 2SK3653B ethernet transceiver 2SK3653B application 2SK3653B Operation
 

 

Price & Availability of 2SK3653B

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.35240411758423