| PART |
Description |
Maker |
| GL607 OA180 OA1182 OA1161 OA1154 |
10 V, 300 mA, gold bonded germanium diode
20 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
140 V, 500 mA, gold bonded germanium diode
55 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
|
| DSI17-06A DS80-04F DS80-12F DS80-16F DSI75-14A DSI |
25 A, 600 V, SILICON, RECTIFIER DIODE
110 A, 400 V, SILICON, RECTIFIER DIODE
110 A, 1200 V, SILICON, RECTIFIER DIODE
110 A, 1600 V, SILICON, RECTIFIER DIODE
100 A, 1400 V, SILICON, RECTIFIER DIODE
52 A, 1600 V, SILICON, RECTIFIER DIODE
|
IXYS CORP
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| S70GL01GN00 S70GL01GN0007 |
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit垄芒 Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
| S70GL01GN00 S70GL01GN00FFI120 S70GL01GN00FFI122 S7 |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
| OA85 |
GERMANIUM DIODE
|
ETC
|
| OA1154 |
GERMANIUM DIODE
|
BK
|
| 1N4502 |
GERMANIUM DIODE
|
New Jersey Semi-Conductor Products, Inc.
|
| 1N58 |
GOLD BONDED GERMANIUM DIODE
|
New Jersey Semi-Conduct...
|
| 1N34 |
Gold Bonded Germanium Diode
|
New Jersey Semi-Conduct...
|
