| PART |
Description |
Maker |
| W9864G6IH W9864G6IH-5 W9864G6IH-6 W9864G6IH-7 W986 |
1M 】 4BANKS 】 16BITS SDRAM
|
Winbond
|
| HY5W2B6DLF-HE HY5W2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| HY5S2B6DLF-BE HY5S2B6DLF-SE HY5S2B6DLFP-SE HY5S2B6 |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
http://
|
| HY5W6B6DLF-HE HY5W6B6DLF-PE HY5W6B6DLFP-HE HY5W6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS45SMVM16800H IS42RMVM16800H |
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42RM16200C |
1M x 16Bits x 2Banks Low Power Synchronous DRAM
|
ISSI
|
| HY62LF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16806A-C HY62LF16806A-I |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| MAX710 MAX710ESE MAX711 MAX711ESE 1742 MAX711C_D M |
3.3V/5V or Adjustable, Step-Up/Down DC-DC Converters 3.3V/5V或可调、升/降压型DC-DC转换
3.3V/5V or Adjustable, Step-Up/Down DC-DC Converters 0.7 A SWITCHING REGULATOR, UUC16
3.3V/5V or Adjustable / Step-Up/Down DC-DC Converters
From old datasheet system
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
