| PART |
Description |
Maker |
| 2SC4132 |
High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz)
|
TY Semiconductor Co., Ltd
|
| 2SB1275 |
High breakdown voltage.(BVCEO = -160V) Low collector output capacitance.
|
TY Semiconductor Co., Ltd
|
| 2SC2632 2SA1124 |
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
|
http://
PANASONIC[Panasonic Semiconductor]
|
| 2SA921 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SB788 2SD958 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| EF2-3NUH-L ED2-24NJ |
Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type
Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type
|
NEC
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SC2631 2SA1123 |
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
http://
|
| 2SC3361 |
Fast switching speed. High breakdown voltage.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
