| PART |
Description |
Maker |
| S-AV5 |
RF POWER AMPLIFIER MODULE VHF POWER AMPLIFIER MODULE(HAM FM)
|
Toshiba Semiconductor
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| KTC3878 KTC3883 |
TRIPLE DIFFUSED PNP TRANSISTOR(HIGH FREQUENCY/ VHF BAND AMPLIFIER)
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, HF, VHF AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| TBB1016 TBB1016RMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| HN3C01F |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3501 |
VHF AMPLIFIER VHF TV TUNER MIXER, OSCILLATOR 甚高频功放甚高频电视调谐器混频器，振荡器
From old datasheet system
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB304C BB304CDW-TL-E B304CDW-TL-E |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| 2SC2118 |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 55410 NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Laboratories
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
http://
TOSHIBA[Toshiba Semiconductor]
|
