| PART |
Description |
Maker |
| RN4962FE |
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8504 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| 2SC5713 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| 2SC5712 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT6L04AE |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L04AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPEl
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
| 2SC2652 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| RN1318 RN1314 RN1315 RN1316 RN1317 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Corporation Toshiba Semiconductor
|
| 2SC5859 |
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
|
Toshiba Semiconductor
|