| PART |
Description |
Maker |
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| 1SS269 |
Small packag Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6(Typ.)
|
TY Semiconductor Co., Ltd
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| TC1504N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1501 |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1404N |
0.5W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| FLC317MG-4 |
HIGH VOLTAGE - HIGH POWER GAAS FET
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| FLL21E040IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E180IU |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL400IK-2 |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
