| PART |
Description |
Maker |
| KMM53216004CK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM53232004CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM53232000CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5368005BSW |
8M x 36 DRAM SIMM(8M x 36 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5328004BSWG KMM5328004BSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362003 KMM5362003G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM53232000BK KMM53232000BKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM53232000CK KMM53232000CKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| CL001E08325B0DJ-60 20084C |
8M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
|
Fox Electronics
|