| PART |
Description |
Maker |
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
| HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V1 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 8M x 16Bit Synchronous DRAM
SDRAM|4X8MX16|CMOS|TSOP|54PIN|PLASTIC 内存| 4X8MX16 |的CMOS |的TSOP | 54PIN |塑料
|
HYNIX SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
|
| EM63B165TS-5ISG EM63B165TS-6ISG EM63B165TS-7ISG |
32M x 16 bit Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| HYM71V633201TH-75 |
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| TC59SM816BFT-70 TC59SM808BFT-75 TC59SM808BFTL-75 T |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| THMY6432G1EG-80 |
32M Word x 64 Bit Synchronous DRAM Module(32Mx 64位同步动态RAM模块)
|
Toshiba Corporation
|
| THMY7232B0EG-80 |
32M Word x 72 Bit Synchronous DRAM Module(32M字x 72位同步DRAM模块)
|
Toshiba Corporation
|
| EBS25EC8APFA-7A EBS25EC8APFA EBS25EC8APFA-75 |
256MB Unbuffered SDRAM DIMM 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
