| PART |
Description |
Maker |
| 2SC4667 E000971 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING COMPUTER COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS226 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS34907 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS18107 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| L1SS226LT1G-15 |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| 1SS18707 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS30807 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS33607 1SS336 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS38207 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
