| PART |
Description |
Maker |
| HM62V16256BLTT-8SL HM62V16256BLTT-8 HM62V16256BLTT |
4 M SRAM (256-kword ×16-bit)(4 M 静态RAM(256k字6) 四米的SRAM56 - KWord的16位）个M静态随机存储器56k字16位）
From old datasheet system
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
|
Hitachi,Ltd.
Hitachi America
|
| KM23C4200D |
4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M(256Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDI88130LPSXCI EDI88130CSXFB EDI88130CSXCC EDI8813 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| EDI88130LPSNC EDI88130CSLM EDI88130CSLB EDI88130CS |
128Kx8 Monolithic SRAM, SMD 5962-89598
128Kx8 Monolithic SRAM SMD 5962-89598
|
ETC[ETC]
|
| N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时0500ns
|
White Electronic Designs Corporation
|
| UT7164-55PCA6 UT7164-55PSA6 UT7164-85PCC6 UT7164-5 |
Combo Memory 2M x 16 Flash 256kx16 SRAM 3.3v 56FBGA
Combo Memory 2M x 16 Flash 512kx16 SRAM 3.3v 56FBGA Tray
Combo Memory 4M x 16 Flash 512kx16/1mx8 SRAM 3.3v 73FBGA Tray
x8 SRAM x8的SRAM
|
ITT, Corp.
|
| ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns.
High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
|
| 5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM
BOX 4.38X3.25X0.91BLACK BULK
STD BLK BOX (3.25X4.38X0.9)
STD-I BLK BOX (3.25X4.38X0.9)
BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器
BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器
BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器
BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器
BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器
STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器
BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器
DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height,
SENSOR HI-IMP 30PSIA DIP PKG
20ns; 512K x 8 monilithic SRAM, SMD 5962-95613
35ns; 512K x 8 monilithic SRAM, SMD 5962-95613
15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Man...
White Electronic Designs
|
| WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛?
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛?
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
|
White Electronic Designs Corporation
|
