| PART |
Description |
Maker |
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| CC5401 |
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
|
Continental Device India Limited
|
| 2SK3608-01L 2SK3608-S 2SK3608-SJ 2SK3608 |
N-CHANNEL SILICON POWER MOSFET
N-CHANNEL SILICON POWER MOSFET 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| C3M0065100J |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| C3M0030090K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| 2SK3610-01 |
N-CHANNEL SILICON POWER MOSFET
10 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC CO LTD
|
| 2SK3932-01MR |
N-CHANNEL SILICON POWER MOSFET 11 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| 2SK3516-01SJ 2SK3516-01L 2SK3516-01S |
N-CHANNEL SILICON POWER MOSFET 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
|
| FMH06N90E |
N-CHANNEL SILICON POWER MOSFET
6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI ELECTRIC CO LTD
|
| 2SK3556-01S 2SK3556 2SK3556-01L 2SK3556-01SJ |
N-CHANNEL SILICON POWER MOSFET 37 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
|
|
