| PART |
Description |
Maker |
| RA08N1317M10 RA08N1317M-101 |
135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| RA07M1317MSA10 |
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| M67755L |
150-175MHz / 7.2V / 7W / FM PORTABLE RADIO
135-150MHz, 7.2V, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA13H1317M RA13H1317M-E01 RA13H1317M-01 |
135-175MHz 13W 12.5V MOBILE RADIO 135 - 175MHz3W 12.5V移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57732 57732 |
144-175 MHz, 12.5V, 7W, FM PORTABLE RADIO
144-175MHZ, 12.5V,7W, FM POPHTABLE RADIO
From old datasheet system
144-175MHz 12.5V /7W /FM PORTABLE RADIO
144-175MHz 12.5V,7W,FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| RA60H1317M RA60H1317M-01 RA60H1317M-E01 |
135-175MHz 60W 12.5V MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H1317M_06 RA30H1317M RA30H1317M-101 RA30H1317M |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67755H |
RF POWER MODULE 150-175MHz, 7.2V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| ST083S10PFH2PBF ST083S04PCN1PBF ST083S08PCN1L ST08 |
135 A, 1000 V, SCR, TO-208AD
135 A, 400 V, SCR, TO-209AC
135 A, 800 V, SCR, TO-209AC
135 A, 1200 V, SCR, TO-209AC
|
|
| LB135DS01 |
135.42MHz Low-Loss SAWF 8MHz Bandwidth 135.42MHz低损耗声表面波滤波器带宽MHz
|
SIPAT Co., Ltd.
SIPAT Co,Ltd
|
| D1004 D1004UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1028UK D1028 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽)
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
