| PART |
Description |
Maker |
| V54C3128804VE V54C3256804VE V54C365164VE V54C32564 |
(V54C3xxxx4VE) 64Mbit SDRAM
|
ProMOS Technologies
|
| K4D623238B-GC K4D623238B-GC_L33 K4D623238B-GC_L40 |
64Mbit DDR SDRAM 64Mb的DDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4 |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
64Mbit SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5756820C HY57V56820CLT-P HY57V56820CT-H HY57V568 |
4 Banks x 8M x 8Bit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
SDRAM - 256Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| TIP-N-RING |
Multilayer Ceramic Chip Capacitors, Ideal for Telephone Line (Tip `N Ring) Filtering, Replaces High Voltage, Leaded, Film Capacitors, Rated for Telecommunications Voltages, Low ESR, Wide Ban
|
Vishay
|
| HYB39S64800CT |
64MBit Synchronous DRAM(64M4× 2M× 8)同步动态RAM)
|
SIEMENS AG
|
| HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI |
524288 WORDS x 8BIT STATIC RAM
524,288 WORDS x 8BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| W28F641B W28F641BB80L W28F641BT80L W28F641TB80L W2 |
From old datasheet system
64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| HYM72V32736BLT8-K HYM72V32736BT8-K HYM72V32736BT8- |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM - Unbuffered DIMM 256MB
x64 SDRAM Module
|
Hynix Semiconductor
|
