| PART |
Description |
Maker |
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| D2031UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| IDT82V2604 IDT82V2604BB |
INVERSE MULTIPLEXING FOR ATM IDT82V2604 反向复用的ATM IDT82V2604
4 Channel, T1/E1 Inverse Multiplexing for ATM
Inverse Multiplexing for ATM, 4-Channel
|
Integrated Device Technology, Inc.
IDT
|
| 310-024103-022 024103-022 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025103-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025109-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025107-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025109-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025109-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
