| PART |
Description |
Maker |
| FLL357ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL177 FLL177ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
Fujitsu Limited
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| FLU35XM |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLU10XM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLL351ME |
L-band medium & high power gaas FTEs
|
Fujitsu Component Limited.
Fujitsu Limited
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET
|
Fujitsu Media Devices Limited
|
| FLL200IB-1 FLL200IB-2 FLL200IB-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLU35ZMNBSP FLU35ZM |
L-Band Medium & High Power GaAs FET
From old datasheet system
|
List of Unclassifed Manufacturers
ETC
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
