| PART |
Description |
Maker |
| SPD50N06S2-14 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - DPAK; 50 A; 55V; NL; 14.4 mOhm
|
INFINEON[Infineon Technologies AG]
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| SPU11N10 SPD11N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=179mOhm, 11A, NL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPD20N03L IPU20N03L |
OptiMOS Buck converter series
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 20mOhm, 30A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPD50N03S2L-06 |
OptiMOS Power-Transistor
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.4mOhm, 50A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| KMB4D0N30SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMA3D6N20SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
