| PART |
Description |
Maker |
| APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT100 |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| ZFSC-2-4 |
Power Splitter/Combiner 2 Way-0 50楼? 0.2 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50惟 0.2 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 0.2 to 1000 MHz
|
Mini-Circuits
|
| IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SMA18-1 A18-1 A18-1_1 CA18-1 A18-11 |
10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Cascadable Amplifier 10 to 1000 MHz
|
MACOM[Tyco Electronics]
|
| ZAPD-2 |
Power Splitter/Combiner 2 Way-0 50Ω 1000 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50ヘ 1000 to 2000 MHz
|
Mini-Circuits
|
| 1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N400 |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
|
| KAI-1020-CBA-FD-BA |
IMAGE SENSOR-CCD, 1000(H) X 1000(V) PIXEL, 500mV, SQUARE, THROUGH HOLE MOUNT
|
KODAK IMAGE SENSOR SOLUTIONS
|
| IXFK21N100F IXFX21N100F |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
IXYS, Corp.
IXYS Corporation
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| STD2NK100Z STU2NK100Z STP2NK100Z |
N-channel 1000 V, 6.25 Ohm, 1.85 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
|
