| PART |
Description |
Maker |
| MN102L59D |
Microcomputer - 16bit - General Purpose
From old datasheet system
|
Panasonic
|
| MN102H797 |
Microcomputer - 16bit - General Purpose
From old datasheet system
LQFP064-P-1414(Pb Free)
|
Matsshita / Panasonic
|
| MN102H74G MN102H74F MN102H74D |
Microcomputer - 16bit - General Purpose
From old datasheet system
LQFP100-P-1414(Pb Free)
|
Matsshita / Panasonic
|
| AKD4563A AK4563A AK4563AVF |
16bit 4AD/2DA APGA/ALC 3V
Low Power 16bit 4ch ADC & 2ch DAC with ALC
|
AKM
Asahi Kasei Microsystems
|
| M38023E7 M38022E3 M38021E2 M38025M2 M38025M1 M3802 |
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
1-Ch. 10-Bit 1.25 MSPS ADC 8-Ch., DSP/SPI, Hardware Configurable, Low Power 24-SOIC -40 to 85
TRANS PREBIASED NPN 200MW SOT-23
Screwless Socket Brdg.(50 pk)
8-BIT SINGLE-CHIP MICROCOMPUTER
R1 单芯位CMOS微机
Single Output LDO, 500mA, Fixed(2.5V), Tight Output Accuracy of 2%, Thermal Overload Protection 20-TSSOP 0 to 125 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
Single Chip 8-Bit CMOS Microcomputer
Single Chip 8-bit Microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Sem...
http://
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 |
3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter
RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
| UPD78081CU-XXX UPD780054GK-XXX-BE9 UPD780054YGK-XX |
44-pin 8-bit microcomputer with on-chip UART
8-bit single-chip microcontroller
Mask ROM 32K bytes, CMOS 8-bit microcomputer 78K/0 series
Mask ROM 24K bytes, CMOS 8-bit microcomputer 78K/0 series
Mask ROM 40K bytes, CMOS 8-bit microcomputer 78K/0 series
78K/0 series ROM-less 8-bit single-chip microcomputers
8-bit CMOS single-chip microcomputer
8-bit single-chip microcomputer 78K/0 series
100-pin g/p control 8-bit microcomputer with on-chip I2C bus
8-bit SC MC with on-chip 8-bit resolution D/A converter, UART
8-bit microcomputer w/ on-chip I2C bus I/F & A/D converter
IEBus controller built-in 8-bit SC microcomputer
|
NEC
|
| TMP68HC11E1T-3 TMP68HC11E9 |
Transient Voltage Suppressor Diodes
THE TMP68HC05C4 CMOS MICROCOMPUTER IS A MEMBER OF THE 68HC05 FAMILY OF LOW-COST SINGLE-CHIP MICROCOMPUTER 微机的CMOS的TMP68HC05C4是低成本的单家庭成员68HC05的单片机
|
Toshiba, Corp.
|
| HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
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