| PART |
Description |
Maker |
| MCP3204-BISL MCP3204-CIST MCP3204-CIP MCP3204-BIP |
2.7V 4-Channel/8-Channel 12-Bit A/D Converters with SPI Serial Interface 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
TWIST-LOK 2.93,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
CBS SCREW-MOUNT NYLON 3/4,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
TWIST-LOK 2.68,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| GBU610 GBU608 |
6.0Amps Glass Passivated Single Phase Silico n Bridge
|
First Components Intern...
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
| AK4628 AK4628VQ |
2-channel 96KHz ADC 8-channel 192KHz DAC
HIGH PERFORMANCE MULTI CHANNEL AUDIO CODEC
|
AKM[Asahi Kasei Microsystems]
|
| SIZ704DT-T1-GE3 |
N-Channel 30-V (D-S) MOSFETs
9.4 A, 30 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| DMN5L06VAK DMN5L06VK-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Inc.
Diodes, Inc.
|
| 6AM14 |
Silicon N-Channel/P-Channel Power MOS FET Array 硅N-Channel/P-Channel功率MOS FET阵列
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| SIZ730DT-T1-GE3 |
N-Channel 30 V (D-S) MOSFETs
35 A, 30 V, 0.0053 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR, 6 PIN
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
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