| PART |
Description |
Maker |
| TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
|
NXP Semiconductors
|
| KBA2338-WCSP KBA2338 |
3W F ilterless C lass-D Audio Power Amplifie r
|
Kingbor Technology Co
|
| TDA2050H TDA2050V TDA2050 |
32W Hi-Fi AUDIO POWER AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HMC482ST89E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 5.0 GHz
|
Hittite Microwave Corporation
|
| HMC478MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4.0 GHz
|
Hittite Microwave Corporation
|
| TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC
Max Power 43 W BTL ??4 ch Audio Power IC
Max Power 43 W BTL 】 4 ch Audio Power IC
IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC
Max Power 43 W BTL × 4 ch Audio Power IC
Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
| TA8264AH |
Max Power 41 W BTL 4 ch Audio Power IC 最大功1糯桥接通道音频功率IC
Max Power 41 W BTL x 4 ch Audio Power IC
From old datasheet system
IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC
|
Toshiba, Corp.
Toshiba Semiconductor
|
| MGFS45A2527B |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3436A |
3.4-3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AT73C213 |
The AT73C213 is a fully integrated, low-cost combined stereo audio DAC and audio amplifier circuit targeted for Li-ion or Ni-Mh battery-powered ...
Power Management for Mobiles (PM) / Audio Interface for Portable Handsets
|
ATMEL[ATMEL Corporation]
|
