| PART |
Description |
Maker |
| NJG1709KC1-L4 NJG1709KC1-L6 NJG1709KC1-C7 NJG1709K |
1.5/1.9GHz BAND FRONT-END GaAs MMIC 1.5/1.9GHz频前端砷化镓微波单片集成电路
|
New Japan Radio Co., Ltd.
|
| NJG1704KC1 NJG1704KC1-C1 NJG1704KC1-C2 NJG1704KC1- |
800MHz BAND FRONT-END GaAs MMIC 800MHz频段前端砷化镓微波单片集成电
|
New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
|
| RFFM8500 |
4.9GHz TO 5.85GHz 802.11a/n/ac FRONT END MODULE
|
RF Micro Devices
|
| RFFM8500QTR7 RFFM8500QPCBA-410 RFFM8500QSQ RFFM850 |
4.9GHz to 5.85GHz 802.11a/n Front End Module
|
RF Micro Devices
|
| RFFM4501SQ |
3.0V TO 5.0V, 4.9GHz TO 5.85GHz 802.11a/n/ac FRONT END MODULE
|
RF Micro Devices
|
| RFFM8506PCK-410 RFFM8506SB RFFM8506SQ RFFM8506SR R |
4.9GHz to 5.85GHz 802.11a/n/ac WiFi Front End Module
|
RF Micro Devices
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| SPM2001A |
GaAs MMIC For 1.9GHz PHS Transmitting Amplifier(砷化1.9GHz PHS发射放大 砷化镓微波单片集成电路为1.9GHz的小灵通发射放大器（砷化镓1.9GHz的小灵通发射放大器
From old datasheet system
MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TSOP,6PIN,PLASTIC
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor Corp
|
| SKY77573-12 |
Tx-Rx Front-End Module for Quad-Band GSM/ GPRS/ EDGE with 4-Band Antenna Switch Support
High efficiency, Single RF input
|
Skyworks Solutions, Inc.
Skyworks Solutions Inc.
|
| RF5924PCBA-41X RF5924 |
3.7V, SINGLE-BAND FRONT-END MODULE
|
RFMD[RF Micro Devices]
|
| HMC309MS804 |
GaAs MMIC 2.4 GHz FRONT-END LNA / SWITCH
|
Hittite Microwave Corporation
|
| SA1921 |
Satellite and cellular dual-band RF front-end
|
NXP Semiconductors
|
