| PART |
Description |
Maker |
| 2SC3832 |
Silicon NPN Transistor Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍扩散平面晶体管(高压和高速开关晶体管
|
Sanken Electric Co.,Ltd.
|
| 2SB331 2SB330 2SD331E |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-220AB TRANSISTOR | BJT | PNP | 150MA I(C) | TO-5 NPN/PNP Triple Diffused Planar Silicon Transistors, Low Freq. Power Amp. Applications
|
Sanyo Semiconductor
|
| 2SD2425 2SD2425AB3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING Low freq. power amp., medium-speed switching transistor
|
NEC Corp. NEC Electronics NEC[NEC]
|
| 2SC2369 2SC1560 2SC1988 2SC2570 NE02100 NE02103 NE |
NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管高FREQUNY NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管FREQUNY
|
NEC[NEC] NEC Corp. Honeywell International, Inc. NEC, Corp.
|
| 2SC3811 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SA1463-T2 2SA1463-T1 2SA1463 |
Silicon transistor HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC
|
| FJE3303 FJE3303H2 FJE3303H2TU FJE3303H1TU |
NPN Silicon Transistor Planar Silicon Transistor High Voltage Switch Mode Applications
|
Fairchild Semiconductor
|
| 2SA1845 |
Silicon power transistor PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC
|
| 2SC2334 |
Silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation Toshiba Semiconductor
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|