| PART |
Description |
Maker |
| MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP
Power 15A 140V Discrete NPN
Complementary Silicon Power Transistors
|
ON Semiconductor
|
| OM5007ST OM5005ST OM5006ST OM5002ST OM5001ST OM500 |
15 Amp, 50 To 600 Volts, 35 To 50 ns trr
100V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package
15 AMP ULTRA FAST RECTIFIER IN SMALL HERMETIC PACKAGE
600V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package
150V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package
|
IRF[International Rectifier]
|
| RFP15N08L |
15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| KIA78L05BPV KIA78L06BPV KIA78L08BPV KIA78L09BPV KI |
6V/0.15A Regulator
9V/0.15A Regulator
10V/0.15A Regulator
12V/0.15A Regulator
15V/0.15A Regulator
18V/0.15A Regulator
20V/0.15A Regulator
24V/0.15A Regulator
0.15A 3-Terminal Voltage Regulator
|
Korea Electronics (KEC)
|
| MJE170 MJE182 MJE171 MJE172 MJE180 MJE181 |
POWER TRANSISTORS(3.0A,40-80V,12.5W) 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
POWER TRANSISTORS(3.0A /40-80V /12.5W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| FGW15N120HD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| C7860M7628-3000 C7860M7628-1035 C7860M7628-1070 C7 |
INput current: 5A; 3Vdc: 80V; deuterium lamp
INput current: 10A; 0.8Vdc: 80V; deuterium lamp
INput current: 10A; 1.2Vdc: 80V; deuterium lamp
INput current: 15A; 0.5Vdc: 80V; deuterium lamp
INput current: 4A; 2.5Vdc: 80V; deuterium lamp
|
Hamamatsu Corporation
|
| BCX5616QTA |
80V NPN MEDIUM POWER TRANSISTORS IN SOT89
|
Diodes
|
| MJD31C1 MJD31CRL |
Power 3A 100V Discrete NPN
|
ON Semiconductor
|
| MRF607 |
UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
