| PART |
Description |
Maker |
| MRFIC1870 MRFIC1870PP |
3.2V GSM GaAs Integrated Power Amplifier
From old datasheet system
|
Motorola
|
| MASWSS0091-DIE MASWSS0091SMB MASWSS0091 |
GaAs SP6T 2.5 V High Power Switch Dual / Tri / Quad-Band GSM Applications
|
MACOM[Tyco Electronics]
|
| MASWSS0091SMB |
GaAs SP6T 2.5 V High Power Switch Dual / Tri / Quad-Band GSM Applications
|
M/A-COM Technology Solu...
|
| MASW-000105 |
GaAs SP6T 2.5 V High Power Switch Dual- / Tri- / Quad-Band GSM Applications
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MRFIC0913 |
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
| Q68000-A9124 CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| GRM1885C1H181JA01D GRM188R71H102KA01B GRM188R61E10 |
6A HIGHLY INTERGRATED SUPLRBUCK
USER GUIDE FOR IR3895 EVALUATION BOARD
6A HIGHLY INTERGRATED SUPLRBUCK
|
International Rectifier
|
