| PART |
Description |
Maker |
| 2SJ313 |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK216206 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK201306 2SK2013 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
|
Toshiba Semiconductor
|
| 2SK2013 |
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application
|
TOSHIBA
|
| 2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application
|
TOSHIBA
|
| HN1L02FU E001983 |
N CHANNEL MOS TYPE/ P CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)
N CHANNEL MOS TYPE, P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| UPA653TT UPA653TT-E1 UPA653TT-E2 |
P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| BA3518F-T1 BA3528FP-T1 BA3506AFT1 BA3506AFE1 BA350 |
0.031 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO16 SOP-16
0.034 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO28 HSOP-28
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
0.04 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
5.4 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM12
5.2 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM10
|
Intel, Corp.
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| TPC8111 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|
