| PART |
Description |
Maker |
| MBM2764 MBM2764-20 MBM2764-25 MBM2764-30 MBM2764-X |
UV ERASABLE 65536-BIT READ ONLY MEMORY
UV Erasable 65536 Bit ROM
|
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Media Devices Limited
Fujitsu Microelectronics
|
| M5M51016BRT-10LL M5M51016BRT-10L D98007 M5M51016BT |
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
From old datasheet system
1048576-BIT(65536-16-1048576-BIT(65536-WORD WORDBY BY16-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| HM4864-2 |
(HM4864x-x) 65536 x 1-Bit DRAM
|
Hitachi
|
| MB8265A |
MOS 65536-Bit DRAM
|
Fujitsu
|
| HM6709 HM6709JP-20 HM6709JP-25 |
65536-WORD X 4-BIT HIGH SPEED STATIC RAM (WITH OE)
|
Hitachi Semiconductor
|
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| HM62864 |
65536-word 8-bit High Speed CMOS Static RAM
65536-word 8-bit High Speed CMOS Static RAM
65536-word ? 8-bit High Speed CMOS Static RAM
|
Electronic Theatre Controls, Inc.
ETC
|
| HN27512P-25 |
EPROM, 65536-Word, 8-Bit One Time Electrically Programmable Read Only Memory
|
Renesas Technology / Hitachi Semiconductor
|
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
| AK6368192D AK6368192G AK6368192S AK6368192W AK6368 |
65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory 65536 × 32位的CMOS / BiCMOS工艺静态随机存取存储器
|
Accutek Microcircuit Corporation
Accutek Microcircuit, Corp.
|
| M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG |
From old datasheet system
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
