| PART |
Description |
Maker |
| KA5M0365RN |
3A/650V 70KHz Power Switch
|
Fairchild Semiconductor
|
| FS6S1265RE FS6S1265RETU FS6S1265REYDTU |
Fairchild Power Switch(FPS)
12A/650V Syncronized Power Switch
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 12N65G-T2Q-T 12N65G-TA3-T 12N65G-TF1-T 12N65L-T2Q- |
12A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| FSCQ0765RT FSCQ0765RTYDTU FSCQ1265RT FSCQ1565RT |
7A/650V QRC Power Switch
Green Mode Fairchild Power Switch (FPS) for Quasi-Resonant Switching Converter
|
FAIRCHILD[Fairchild Semiconductor]
|
| FSCQ1565RP FSCQ1565RPSYDTU FSCQ1565RT FSCQ0765RT F |
15A/650V QRC Power Switch
Green Mode Fairchild Power Switch (FPS) for Quasi-Resonant Switching Converter
|
FAIRCHILD[Fairchild Semiconductor]
|
| KA5L0365R KA5L0365RN KA5L0365RTU KA5L0365RYDTU KA5 |
KA5L0365R - 3A/650V 50KHz Power Switch
Fairchild Power Switch(FPS)
|
FAIRCHILD[Fairchild Semiconductor]
|
| MDF11N65B MDF11N65BTH |
N-Channel MOSFET 650V, 12A, 0.65(ohm)
|
MagnaChip Semiconductor...
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
| STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BT138-600 BT138-600F BT138-600G BT138-500/B BT138- |
TRIAC 12A SOT-186A
TRIAC 12A/600V
TRIAC 12A/500V
Triacs
|
Philips Semiconductors
|
| STD12NE06L STD12NE06L-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 12A条（丁）|51AA
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
|
California Eastern Laboratories, Inc.
STMicroelectronics
ST Microelectronics
|
