| PART |
Description |
Maker |
| SKIIP04ACB066V1 |
Large Current 300mA CMOS LDO Regulators; Output voltage (V): 3.1; Output current (mA): 300; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 60; Ripple rejection (dB): 60; Circuit current (µA): 65; Package: HVSOF6
3-phase bridge inverter
|
Semikron International
|
| RHFL4913S50-04V 5962F0253401VXA 5962F0253401VXC 59 |
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
RAD-HARD POSITIVE FIXED VOLTAGE REGULATORS
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SKIIP03NEB066V1 |
Large Current 300mA CMOS LDO Regulators; Output voltage (V): 2.9; Output current (mA): 300; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 60; Ripple rejection (dB): 60; Circuit current (µA): 65; Package: HVSOF6
3-phase bridge rectifier brake chopper 3-phase bridge inverter
|
Semikron International
|
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
| SD210DE SST823 SST824 SD5001N SD5401CY SST215 |
Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.9V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.9V RoHS Compliant: No
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.8V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process
HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS
|
LINEAR[Linear Integrated Systems]
|
| SSTVN16857MTD SSTV16857 SSTV16857MTD SSTVN16857 |
Voltage Regulator IC; Output Current:300mA; Output Voltage:5V; Package/Case:8-MSOP; Supply Voltage Max:6V; Current Rating:300mA; Leaded Process Compatible:No; Output Current Max:300mA; Output Voltage Max:5V
14-Bit Register with SSTL-2 Compatible I/O and Reset
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| TX10005JASLPLNH TX1000 TX10005BASLPLNH TX10005CASL |
1000 Watt. AC/DC power supply. Output voltage 2.5V, output current 200A
1000 Watt. AC/DC power supply. Output voltage 18.0V, output current 56A
1000 Watt. AC/DC power supply. Output voltage 24.0V, output current 42A
1000 Watt. AC/DC power supply. Output voltage 28.0V, output current 36A
1000 Watt. AC/DC power supply. Output voltage 3.3V, output current 182A
1000 Watt. AC/DC power supply. Output voltage 15.0V, output current 67A
1000 Watt. AC/DC power supply. Output voltage 48.0V, output current 21A
1000 Watt. AC/DC power supply. Output voltage 36.0V, output current 28A
1000 WATT AC/DC POWER SUPPLY
1000 Watt. AC/DC power supply. Output voltage 20.0V, output current 50A
|
CANDD[C&D Technologies]
|
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
| 1N754 1N746 1N759 1N4371 1N4372 1N747 1N748 1N749 |
500mW SILICON ZENER DIODES
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 12.0 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. -2% tolerance.
SIDE GRIPS, PAIR GREY LARGESIDE GRIPS, PAIR GREY LARGE; Colour:Grey; Pack size:2
surface mount silicon Zener diodes
500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 10 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. -2% tolerance.
500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. -1% tolerance.
500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. -1% tolerance.
|
Jinan Gude Electronic D...
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
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|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
