| PART |
Description |
Maker |
| ATC20 |
ATC20 Summary [Updated 9/02. 11 Pages] The ATC20 Cell-based ASIC (CBIC) family features a comprehensive library of 0.21-micron standard logic and I/O
The ATC20 Cell-based ASIC (CBIC) family features a comprehensive library of 0.21-micron standard logic and I/O cells designed to operate with a supply voltage of 1.8V /- 0.15V and memory cells compiled to the precise requirements of the d
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ATMEL Corporation
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| ATC35 |
ATC35 Summary [Updated 1/03. 14 Pages] The ATC35 Cell-based ASIC (CBIC) family features a comprehensive library of 0.35-micron standard logic and I/O
A comprehensive library of 0.35-micron standard logic and I/O cells designed to operate with a supply voltage of 3.3V /- 0.3V
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ATMEL Corporation
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| HER207 HER207-T3 HER207-TB HER206 HER206-T3 HER206 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
2.0A HIGH EFFICIENCY RECTIFIER 2.0安培高速整流二极管
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WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
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| HER306-T3 HER306-TB HER302-T3 HER302-TB HER308 HER |
3.0A HIGH EFFICIENCY RECTIFIER 3.0A的高效整
85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
20000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
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Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
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SPANSION LLC
Spansion, Inc.
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| ATC18RHA |
Rad. Hard 0.18 Um CMOS Cell-based ASIC for Space Use
|
ATMEL Corporation
|
| STEVAL-ISV012V1 |
Up to 5 W solar battery charger for single-cell Li-ion and Li-Pol batteries based on the SPV1040 and L6924D
|
STMicroelectronics
|
| HER303 HER302 |
TECHNICAL SPECIFICATIONS OF HIGH EFFICIENCY RECTIFIER
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
DC Components Co., Ltd.
|
| HER301 HER303 HER302 |
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
3.0 AMP HIGH EFFICIENCY RECTIFIERS 3.0放大器高效整流二极管
|
Bytes
|
| DS2726G |
5-Cell to 10-Cell Li Protector with Cell Balancing; Package: THIN QFN, 32 pin ; Temperature Range: -40°C to 85°C 11-CHANNEL POWER SUPPLY SUPPORT CKT, QCC32
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Maxim Integrated Products, Inc.
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
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Intersil, Corp.
Intersil Corporation
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