| PART |
Description |
Maker |
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| MJE70006 MJE700G MJE702G MJE703G MJE803G MJE700 MJ |
Plastic Darlington Complementary Silicon Power Transistors(浜?ˉ??揪??】纭?????浣??)
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
|
ONSEMI[ON Semiconductor]
|
| FJPF9020 FJPF9020TU |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
PNP Epitaxial Darlington Transistor
NPN Epitaxial Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| BC618 ON0154 BC618RL BC618ZL1 |
Darlington Transistor NPN
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Darlington Transistors(NPN Silicon) 1000 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
|
ON Semiconductor
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| 2N6724 2N6725 2N6724STOA 2N6724STOB 2N6724STZ |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Darlington Transistor
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| BC517 BC516 |
Darlington Transistors
COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR
|
Motorola Inc
MICRO-ELECTRONICS[Micro Electronics]
|
| CMPTA64 CMPTA13 CMPTA14 CMPTA63 |
SMD Small Signal Transistor PNP Darlington
complementary silicon darlington transistors
|
Central Semiconductor Corp
|
| 2SD1630 2SD1630L |
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 70V的五（巴西）总裁| 1A条一（c）|26
NPN SILICON DARLINGTON POWER TRANSISTOR
|
NEC
|
| MPSW13 ON2351 MPSW14 |
From old datasheet system
One Watt Darlington Transistors
|
MOTOROLA[Motorola, Inc]
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
