| PART |
Description |
Maker |
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| LS301PDIP |
MONOLITHIC DUAL NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
|
Micross Components
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3061 ECN3061SPR ECN3061SP ECN3061SPV |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| HI1-565AJD-5 HI1-565AKD-5 HI1-565ASD_883 HI1-565AS |
From old datasheet system
High Speed Monolithic D/A Converter with Reference
High Speed, Monolithic D/A Converter with Reference
CIRCUIT BREAKER
High Speed/ Monolithic D/A Converter with Reference
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
|
INTERSIL[Intersil Corporation]
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3512 |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| LT3511-15 |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| LT3587EUDPBF LT3587EUDTRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
