| PART |
Description |
Maker |
| UTCHE8550 HE8550-TO-92 |
PNP EPITAXIAL SILIC ON TRANSISTOR
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| AP2532GY |
Low Gate Charge, Fast Switching Performance
2.4 A, 30 V, 0.13 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
|
| FDS6298 |
30V N-Channel Fast Switching PowerTrench MOSFET
30V N-Channel Fast Switching PowerTrench® MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| SIDC07D60F6 SIDC07D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| AP6906GH-HF AP6906GH-HF-14 |
16.4 A, 60 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5
Simple Drive Requirement, Fast Switching Performance
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| SIDC03D120F6 |
Fast switching diode chip in EMCON-Technology soft, fast switching
|
Infineon Technologies AG
|
| SI7806BDN-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
|
| SI7342DP |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay
|
| SI4888DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
