| PART |
Description |
Maker |
| 2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| SD1214-12 SD1212-02 |
RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| NTE236 |
Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| MAX4385E MAX4385EEUK-T MAX4386EESD MAX4386EEUD MAX |
Low-Cost, 230MHz, Single/Quad Op Amps with Rail-to-Rail Outputs and ±15kV ESD Protection
Low-Cost / 230MHz / Single/Quad Op Amps with Rail-to-Rail Outputs and 15kV ESD Protection
Low-Cost, 230MHz, Single/Quad Op Amps with Rail-to-Rail Outputs and ±15kV ESD Protection
Low-Cost, 230MHz, Single/Quad Op Amps with Rail-to-Rail Outputs and 15kV ESD Protection
" Low- Cost, 230MHz, Single Op Amps with Rail-to- Rail Outputs and ?5kV ESD in SOT23"
Low-Cost, 230MHz, Single/Quad Op Amps with Rail-to-Rail Outputs and 【15kV ESD Protection
Low-Cost, 230MHz, Single/Quad Op Amps with Rail-to-Rail Outputs and 5kV ESD Protection
Low-Cost.230MHz.Single/Quad Op Amps with Rail-to-Rail Outputs and ±.15kV ESD Protection
|
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp.
ADPOW
|
| M67712 67712 |
220-225MHz,12.5V,30W,SSB MOBILE RADIO
220-225MHz /12.5V /30W /SSB MOBILE RADIO
From old datasheet system
220-225MHZ, 12.5V, 30W, SSB MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| MS1008 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
|
