| PART |
Description |
Maker |
| 2SC305310 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| RT1A3906-T112 |
FOR LOW FREQUENCY AMPLIFY APPLICATION
|
Isahaya Electronics Cor...
|
| RT2A00AM1 |
COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION
|
Isahaya Electronics Cor...
|
| 2SJ14510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| INC5001AP1 |
For low frequency power amplify Silicon NPN Epitaxial
|
Isahaya Electronics Corporation
|
| INC6008AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INA5002AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INC6006AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| 2SC5938 2SC5938B 2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA2027 |
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| INA6006AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
