| PART |
Description |
Maker |
| STH9NA80 STH9NA80FI STW9NA80 |
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
N-Channel 800V-0.85Ω-9.1A - TO-247/ISOWATT218 Fast Power MOS Transistor(Ｎ沟道快速功率ＭＯＳ晶体
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| IRF840AL IRF840AS IRF840ASTRR |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 8A条（丁）|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFI840G |
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 0.85ohm，身份证\u003d 4.6a进入
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=4.6A)
HEXFET? Power MOSFET
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQA8N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB6NC80 STB6NC80Z STB6NC80Z-1 STP6NC80ZFP STP6NC8 |
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800V 1.5ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
5.4 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| FQA10N80C |
800V N-Channel MOSFET
800V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| UF840L-TF3-T UF840 UF840L-TA3-T UF840-TA3-T UF840- |
8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| IRFIBE20G |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A)
GT 19C 19#12 SKT RECP BOX
|
IRF[International Rectifier]
|
| STW13NK80Z 9631 |
N-CHANNEL 800V - 0.53W - 12A TO-247 Zener-Protected SuperMESHPower MOSFET N沟道800V 0.53W -2A47齐纳保护SuperMESH？功率MOSFET
N-CHANNEL 800V - 0.53W - 12A TO-247 Zener-Protected SuperMESH Power MOSFET
From old datasheet system
N-CHANNEL 800V 0.53 OHM 12A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A)
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
|
IRF[International Rectifier]
http://
|
| STB6NC80Z-1 STB6NC80ZT4 STP6NC80ZFP |
N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
|
ST Microelectronics
|
| IRFK4HE50 |
800V,26A,N-Channel HEXFET Power MOSFET(800V,26A,N沟道 HEXFET 功率MOS场效应管) 800V的，26A，N沟道HEXFET功率MOSFET00V的，26A条，沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
