| PART |
Description |
Maker |
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PMV56XN |
UTrenchMOS extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| PMWD19UN PMWD19UN-01 |
DUAL uTRENCHMOS ULTRA LOW LEVEL FET
Dual uTrenchMOS (tm) ultra low level FET 双uTrenchMOSTM）超低水平场效应
From old datasheet system
Dual uTrenchMOS(TM) ultra low level FET
|
NXP Semiconductors
HIROSE ELECTRIC Co., Ltd.
PHILIPS[Philips Semiconductors]
|
| LPW-351202F LPW-351202J LPW-351202K LPW-1051202F L |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| MBD110DWT1 |
Extremely Low Minority Carrier Lifetime
|
TY Semiconductor Co., Ltd
|
| FESD05LCDS |
Extremely Low Capacitance TVS Diode
|
FutureWafer Tech Co.,Lt...
|
| PMN50XP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
